Chemical mechanical polishing (CMP) has increasingly been recognized as an enabler for the fabrication of novel structures for a broad range of devices, from semiconductors, to MEMS and optoelectronics, among others. Many of these applications require ultra smooth surfaces and/or planarization of unique layers in order to function properly and CMP is the only process capable of delivering the desired result.
Examples include planarization of thick oxides for MEMS, final step polishing of strained-layer germanium (Ge) or silicon-germanium (SiGe) structures, and surface roughness reduction for gallium nitride (GaN), sapphire or other ultra hard materials.
Manufacturers rely on Entrepix to determine the right combination of CMP consumables (pads and slurries) and tool process conditions that define a successful process.
Criteria that a CMP process must take into account include: film stack composition, layer thicknesses, incoming topography and post requirements, feature sizes and pattern densities, target thicknesses and uniformity requirements. Concerns that have resurfaced with the new materials and applications include film stress, mechanical integrity and delamination issues.
Entrepix brings the industry's strongest knowledge base and breadth of experience to overcome these challenges and ensure the successful development and implementation of CMP.
By understanding the chemical interactions and process dynamics, Entrepix has successfully implemented the CMP process into a growing range of novel devices, thereby enabling their functionality and accelerating their arrival into the marketplace.